features ? complementary type fmmt593 marking: 4 93 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 120 v v ceo collector - emitter voltage 100 v v ebo emitter - base voltage 5 v i c collector current 1000 m a p c collector power dissipation 250 m w r ja thermal resistance from j u nction to a mbient 500 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 00 a , i e =0 120 v collector - emitter breakdown voltage v (br) c e o i c = 1 0 ma, i b =0 100 v emitter - base breakdown voltage v (br)eb o i e = 10 0 a , i c =0 5 v collector cut - off current i cbo v cb = 100 v, i e =0 0.1 a collector cut - off current i c e s v c es = 100 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 4 v, i c =0 0.1 a h fe (1) * v ce = 10 v, i c = 1m a 100 h fe (2) * v ce = 10 v, i c = 250 ma 100 300 h fe (3) * v ce = 10 v, i c = 0.5 a 60 dc current gain h fe (4) * v ce = 10 v, i c = 1 a 20 v ce(sat) 1 * i c = 500m a, i b = 50 ma 0 .3 v collector - emitter saturation voltage v c e(sat) 2 * i c = 1 a, i b = 1 00 ma 0.6 v b ase - emitter saturation voltage v b e(sat) * i c = 1 a, i b = 100 ma 1. 15 v b ase - emitter voltage v b e * v ce = 10 v, i c = 1 a 1 v transition frequency f t v ce = 1 0 v,i c = 5 0 ma , f=1 00 mhz 150 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1 m hz 10 pf * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. so t C 23 1. base 2. emitter 3. collector transistor (npn) fmmt 4 93 1 date:2011/05 www.htsemi.com semiconductor jinyu
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